Toshiba KBG30ZMS512G User Manual
Displayed below is the user manual for KBG30ZMS512G by Toshiba which is a product in the Internal Solid State Drives category. This manual has pages.
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1 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
SSD
Standard Models
M.2 1620-S2
Single Package
M.2 1620-S3
Single Package
M.2 2230-S2
Single-sided
M.2 2230-S3
Single-sided
Model
Number
(Non-SED)
KBG30ZPZ128G
KBG30ZPZ256G
KBG30ZPZ512G
KBG30ZMS128G
KBG30ZMS256G
KBG30ZMS512G
(SED)
KBG3AZPZ128G
KBG3AZPZ256G
KBG3AZPZ512G
KBG3AZMS128G
KBG3AZMS256G
KBG3AZMS512G
Memory
TLC (BiCS FLASHTM)
Interface
PCI ExpressⓇ Base Specification Revision 3.1a (PCIeⓇ)
Maximum Speed
16 GT/s (PCIeⓇ Gen3x2 Lane)
Command
NVM ExpressTM Revision 1.2.1 (NVMeTM)
Connector Type
-
M.2 B-M
Formatted Capacity1)
128 GB
256 GB
512 GB
128 GB
256 GB
512 GB
Perfor-
mance2)
(Up to)
Sequential
Read
(Non-SED)
1,300 MB/s
{1,240 MiB/s}
1,400 MB/s
{1,330 MiB/s}
1,500 MB/s
{1,430 MiB/s}
1,300 MB/s
{1,240 MiB/s}
1,400 MB/s
{1,330 MiB/s}
1,500 MB/s
{1,430 MiB/s}
(SED)
1,200 MB/s
{1,140 MiB/s}
1,250 MB/s
{1,190 MiB/s}
1,300 MB/s
{1,240 MiB/s}
1,200 MB/s
{1,140 MiB/s}
1,250 MB/s
{1,190 MiB/s}
1,300 MB/s
{1,240 MiB/s}
Sequential
Write
(Non-SED)
600 MB/s
{570 MiB/s}
800 MB/s
{760 MiB/s}
1,000 MB/s
{950 MiB/s}
600 MB/s
{570 MiB/s}
800 MB/s
{760 MiB/s}
1,000 MB/s
{950 MiB/s}
(SED)
550 MB/s
{520 MiB/s}
750 MB/s
{710 MiB/s}
950 MB/s
{900 MiB/s}
550 MB/s
{520 MiB/s}
750 MB/s
{710 MiB/s}
950 MB/s
{900 MiB/s}
Supply Voltage
3.3 V ±5 %
1.8 V ±5 %
1.2 V ±5 %
3.3 V ±5 %
Power
Consump-
tion
Active
2.7 W typ.
2.8 W typ.
3.2 W typ.
3.3 W typ.
L1.2 mode
5 mW typ.
5 mW typ.
KEY FEATURES
Toshiba 64-Layer BiCS FLASH™
PCIe® Gen3*2L NVMe™
Capacities up to 512GB
M.2 1620 single package and M.2 2230 single-sided
form factor
TCG OPAL 2.01 Optional for SED
APPLICATIONS
Ultra-mobile PCs
2-in-1 notebook PCs
IoT/embedded devices
Server and storage array boot drives
BG3 SERIES
CLIENT SSD
The BG3 series leverages 64-layer, 3-bit-per-cell (TLC) BiCS FLASH™ and features
NVMeTM Revision 1.2.1. With Host Memory Buffer (HMB) technology, this SSD series
retains high performance in a DRAM-less architecture, while enabling reduced power
and a smaller footprint.
BG3 SSDs, as an innovative, next generation single-package ball grid array (BGA)
SSD product line, harness the flexibility in system design that enables mobile
computing and IoT embedded devices to be smaller, lighter, faster, and more power
efficient. Also, these power-saving BG3 SSDs offer data center applications an
alternative solution for server boot storage.
The BG3 series is available in 128GB, 256GB, and 512GB capacities. All three
models are available in a surface-mount single package M.2 1620 or a removable
module M.2 2230 form factor. BG3 SED models are also available.
Product image may represent a design model
SPECIFICATIONS
2 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
Note: 1) Definition of capacity: Toshiba Memory Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB)
as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however,
reports storage capacity using powers of 2 for the definition of 1GB = 230 = 1,073,741,824 bytes and therefore
shows less storage capacity. Available storage capacity (including examples of various media files) will vary based
on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-
installed software applications, or media content. Actual formatted capacity may vary.
2) Read and write speed, tested on the state of "Host Memory Buffer (HMB) = On", may vary depending on the host
device, read and write conditions, and file size.
1 MiB (mebibyte) = 220 bytes = 1,048,576 bytes, and 1 MB (megabyte) = 1,000,000 bytes.
3) MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean
failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of
the product may be different from the MTTF.
4) The Safety/EMI Standard is supported for KBG3xZMSxxxx only.
* PCIe and PCI Express are registered trademarks of PCI-SIG
* NVMeTM and NVM ExpressTM are trademarks of NVM Express, Inc.
* All other company names, product names, and service names mentioned herein may be trademarks of their respective
companies.
* Availability of the SED model line-up may vary by region.
Standard Models
M.2 1620-S2
Single Package
M.2 1620-S3
Single Package
M.2 2230-S2
Single-sided
M.2 2230-S3
Single-sided
Size
20.0 mm x
16.0 mm x
1.3 mm
20.0 mm x
16.0 mm x
1.5 mm
30.0 mm x
22.0 mm x
2.18 mm
30.0 mm x
22.0 mm x
2.38 mm
Weight
0.85 g typ.
1.00 g typ.
2.42 g typ.
2.60 g typ.
Tempera-
ture
Operating
0 to 80 °C
(Package Surface Temperature)
0 to 80 °C
(Components Temperature)
Non-
operating
-40 to 85 °C
Reliability3)
Mean Time to Failure (MTTF): 1,500,000 hours
Product Life: Approximately 5 years
More Features
・Device Self-test is supported.
・Host Controlled Thermal Management (HCTM) is supported.
・The feature of Host Memory Buffer (HMB) is supported.
・Firmware security feature (only digitally signed firmware can be installed) is supported.
Compliance4)
UL, cUL, TÜV, KC, FCC, BSMI, CE, RCM, ISED, VCCI, Moroccan conformity mark
3 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
ORDERING INFORMATION
K
XX
X
X
X
X
X
XXXX
1
2
3
4
5
6
7
8
1. Product Name K: SSD product
2. Prodct Category BG: BG Series
3. Development Generation 3: Generation 3
4. Option Code 1 0: Non-SED
A: SED
5. Option Code 2 Z: No-option
6. Connector Type M: M.2 (B-M Key)
P: M.2 BGA
7. Form Factor S: M.2 2230 Single Sided
Z: M.2 1620 Single Package
8. Capacity 128G / 256G /512G
128G is 128 GB, 256G is 256 GB and 512G is 512 GB
(1 GB = 1,000,000,000 bytes)
4 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
Note: 1) Single Sided/Top side 1.35mm Maximum Thickness
2) Single Sided/Top side 1.5 mm Maximum Thickness
3) Availability of the SED model line-up may vary by region.
Note: 1) 1 GB (Gigabyte) = 1,000,000,000 bytes
Note: 1) Under the condition of measurement with 128 KiB unit sequential access and 4KiB align. Queue depth is 32,
and access range is 16GiB.
1KiB (Kibibyte) = 210 bytes = 1024 bytes
Model Number
Formatted
Capacity
Form Factor/Connect Type
Function
Note
KBG30ZPZ128G
128 GB
M.2 1620-S21)
Non-SED
KBG30ZPZ256G
256 GB
KBG30ZPZ512G
512 GB
M.2 1620-S32)
KBG3AZPZ128G
128 GB
M.2 1620-S21)
SED3)
KBG3AZPZ256G
256 GB
KBG3AZPZ512G
512 GB
M.2 1620-S32)
KBG30ZMS128G
128 GB
M.2 2230-S21) -B-M
Non-SED
KBG30ZMS256G
256 GB
KBG30ZMS512G
512 GB
M.2 2230-S32) -B-M
KBG3AZMS128G
128 GB
M.2 2230-S21) -B-M
SED3)
KBG3AZMS256G
256 GB
KBG3AZMS512G
512 GB
M.2 2230-S32) -B-M
Capacity
Total Number of User Addressable Sectors in LBA Mode
512 bytes sector
4,096 bytes sector
128 GB1)
250,069,680
31,258,710
256 GB1)
500,118,192
62,514,774
512 GB1)
1,000,215,216
125,026,902
Standard
Models
(Non-SED)
KBG30ZPZ128G
KBG30ZMS128G
KBG30ZPZ256G
KBG30ZMS256G
KBG30ZPZ512G
KBG30ZMS512G
(SED)
KBG3AZPZ128G
KBG3AZMS128G
KBG3AZPZ256G
KBG3AZMS256G
KBG3AZPZ512G
KBG3AZMS512G
Interface Speed
16 GT/s (Gen3x2 Lane), 8 GT/s (Gen3x1 Lane)
10 GT/s (Gen2x2 Lane), 5 GT/s (Gen2x1 Lane)
5 GT/s (Gen1x2 Lane), 2.5 GT/s (Gen1x1 Lane)
Sequential
Read1)
(Up to)
(Non-SED)
1,300 MB/s
{1,240 MiB/s}
1,400 MB/s
{1,330 MiB/s}
1,500 MB/s
{1,430 MiB/s}
(SED)
1,200 MB/s
{1,140 MiB/s}
1,250 MB/s
{1,190 MiB/s}
1,300 MB/s
{1,240 MiB/s}
Sequential
Write1)
(Up to)
(Non-SED)
600 MB/s
{570 MiB/s}
800 MB/s
{760 MiB/s}
1,000 MB/s
{950 MiB/s}
(SED)
550 MB/s
{520 MiB/s}
750 MB/s
{710 MiB/s}
950 MB/s
{900 MiB/s}
PERFORMANCE
PRODUCT LINE UP
CAPACITY
5 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
Standard Models
M.2 1620 Single Package
M.2 2280 Module
Allowable voltage
3.3 V ±5 %
1.8 V ±5 %
1.2 V ±5 %
3.3 V ±5 %
Allowable noise/ripple
100 mV p-p, 0-10MHz
Allowable supply rise time
Comply to the PCI-SIG specification of
Power Up/Down Sequence
2 –100 ms
Note: 1) Ambient Temperature
2) The values are specified at the condition causing maximum power consumption and Power State 0.
3) PCIe Link state L1.2
Power consumption during the Admin command processing is excluded.
Operation
(Ta1)=25°C)
M.2 1620 Single Package
KBG30ZPZ128G
KBG3AZPZ128G
KBG30ZPZ256G
KBG3AZPZ256G
KBG30ZPZ512G
KBG3AZPZ512G
Read2)
2.7 W typ.
2.8 W typ.
2.8 W typ.
Write2)
2.1 W typ.
2.4 W typ.
2.8 W typ.
Power State33)
50 mW typ.
Power State43)
5 mW typ.
Operation
(Ta1)=25°C)
M.2 2230 Module
KBG30ZMS128G
KBG3AZMS128G
KBG30ZMS256G
KBG3AZMS256G
KBG30ZMS512G
KBG3AZMS512G
Read2)
3.2 W typ.
3.3 W typ.
3.3 W typ.
Write2)
2.5 W typ.
2.8 W typ.
3.2 W typ.
Power State 33)
50 mW typ.
Power State 43)
5 mW typ.
SUPPLY VOLTAGE
POWER CONSUMPTION
6 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
ENVIRONMENTAL CONDITIONS
Note: 1) Ta: Ambient Temperature, Tc: Package Surface or Components Temperature
2) Packaged in Toshiba Memory Corporation’s original shipping package.
Note: 1) Packaged in Toshiba Memory Corporation’s original shipping package.
Note: 1) Apply shocks in each direction of the drive’s three mutually perpendicular axes, one axis at a time.
2) Packaged in Toshiba Memory Corporation’s original shipping package.
Condition
Range
Gradient
M.2 1620 Single Package
M.2 2280 Module
Operating1)
0 °C (Tc) – 80 °C (Tc)
(Package Temperature)
0 °C (Tc) – 80 °C (Tc)
(Components Temperature)
30 °C (Ta) / h maximum
Non-operating
-40 °C – 85 °C
30 °C / h maximum
Under Shipment 2)
-40 °C – 85 °C
30 °C / h maximum
Condition
Range
Operating
8 % – 90 % R.H. (No condensation)
Non-operating
8 % – 95 % R.H. (No condensation)
Under Shipment1)
5 % – 95 % R.H.
Max. wet bulb
32.5 °C (Operating)
40.0 °C (Non-operating / Shipping)
Condition
Range
Operating1)
14.709 km/s2 {1,500 G}, 0.5 ms half sine wave
Non-operating1)
Under Shipment2)
100 cm free drop
Condition
Range
Operating
196 m/s2 {20 G} Peak, 10 - 2,000 Hz
(20 minutes per axis) x 3 axis
Non-operating
TEMPERATURE
HUMIDITY
SHOCK
STANDARDS
VIBRATION
STANDARDS
7 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
COMPLIANCE
Note: 1) The Safety/EMI Standard is supported for KBG3xZMSxxxx only.
2) UL certification is basically on a voluntary basis.
Title
Description
Region
UL1)
(Underwriters Laboratories)
UL 60950-1
USA2)
cUL1)
(Underwriters Laboratories of Canada)
CSA-C22.2 No.60950-1-07
Canada
TÜV1)
(Technischer Überwachungs Verein)
EN 60950-1
EURO
KC1)
KN32, KN35
Korea
FCC1)
FCC part 15 Subpart B
USA
BSMI1)
(Bureau of Standards, Metrology and Inspection)
CNS13438 (CISPR Pub. 22)
Taiwan
CE1)
EN 55032, EN 55024
EURO
RCM1)
AS/NZS CISPR 32
Australia, New Zealand
ISED1)
ICES-003
Canada
Moroccan conformity mark1)
NM EN 55032, NM EN 22024
Morocco
VCCI1)
VCCI-CISPR32
Japan
Parameter
Value
Mean Time to Failure
1,500,000 hours
Product Life
Approximately 5 years
SAFETY / EMI STANDARDS
RELIABILITY
8 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
MECHANICAL SPECIFICATIONS
Unit:mm
Dimension
Description
KBG30ZPZ128G
KBG3AZPZ128G
KBG30ZPZ256G
KBG3AZPZ256G
KBG30ZPZ512G
KBG3AZPZ512G
c
Thickness of BGA Package
1.30 mm Max.
1.50 mm Max.
Figure 1: Dimensions of KBG3xZPZxxxx (Single Package)
Model Number
Weight
Width
Height
Length
KBG30ZPZ128G
KBG3AZPZ128G
0.85 g typ.
16.00 mm
1.30 mm
20.00 mm
KBG30ZPZ256G
KBG3AZPZ256G
KBG30ZPZ512G
KBG3AZPZ512G
1.00 g typ.
1.50 mm
M.2 1620 SINGLE PACKAGE
9 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
Unit:mm
Dimension
Description
KBG30ZMS128G
KBG3AZMS128G
KBG30ZMS256G
KBG3AZMS256G
KBG30ZMS512G
KBG3AZMS512G
A
Thickness of BGA Package
(without label)
1.30 mm Max.
1.50 mm Max.
Figure 2: Dimensions of KBG3xZMSxxxx (M.2 2230 Module)
Model Number
Weight
Width
Height
Length
KBG30ZMS128G
KBG3AZMS128G
2.42 g typ.
22.00 mm
2.18 mm
30.00 mm
KBG30ZMS256G
KBG3AZMS256G
KBG30ZMS512G
KBG3AZMS512G
2.60 g typ.
2.38 mm
M.2 2230 MODULE
10 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
M.2 1620 SINGLE PACKAGE
INTERFACE CONNECTOR
Note: 1) The total ball number is 291.
2) The voltage powers must be supplied to each ball on all power rails.
3) NC is not used in KBG3xZPZxxxx. But NC ball function is assigned in PCI-SiG specification.
4) NC, DNU and RFU must be connected to independent OPEN land, and can't be connected between each other on
host board.
5) DIAG0 and DIAG1 are engineering diagnosis balls. Toshiba Memory Corporation requests to enable access to
DIAG0 and DIAG1 on host board.
Figure 3: Ball Map of KBG3xZPZxxxx (Single Package)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
A
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
B
DNU
DNU
DNU
NC
DNU
DNU
DNU
DNU
DNU
DNU
C
GND
GND
GND
GND
GND
DNU
NC
NC
DNU
NC
DNU
DNU
RFU
RFU
GND
DNU
DNU
DNU
D
REF
CLKP
REF
CLKN
GND
PER
ST#
CLK
REQ#
PWR
_1
PWR
_1
GND
DNU
DIAG1
NC
RFU
E
GND
GND
GND
GND
GND
GND
GND
NC
PWR
_1
PWR
_1
GND
NC
DIAG0
GND
GND
DNU
DNU
DNU
F
PERp0
PERn0
GND
PE
DET
RFU
G
GND
GND
GND
GND
GND
PWR
_3
PWR
_3
GND
GND
PWR
_3
PWR
_3
GND
GND
DNU
DNU
DNU
H
PETp0
PETn0
PWR
_3
PWR
_3
GND
GND
PWR
_3
PWR
_3
RFU
RFU
J
GND
GND
GND
GND
GND
PWR
_3
PWR
_3
GND
GND
PWR
_3
PWR
_3
GND
GND
DNU
DNU
DNU
K
PERp1
PERn1
GND
GND
GND
GND
GND
GND
RFU
RFU
L
GND
GND
GND
GND
GND
RFU
RFU
RFU
RFU
RFU
RFU
GND
GND
DNU
DNU
NC
M
PETp1
PETn1
RFU
RFU
GND
GND
RFU
RFU
RFU
RFU
N
GND
GND
GND
GND
GND
RFU
RFU
RFU
RFU
RFU
RFU
GND
GND
DNU
NC
NC
P
NC
NC
GND
GND
GND
GND
GND
GND
RFU
RFU
R
GND
GND
GND
GND
GND
PWR
_2
PWR
_2
GND
GND
PWR
_2
PWR
_2
GND
GND
DNU
NC
NC
T
NC
NC
PWR
_2
PWR
_2
GND
GND
PWR
_2
PWR
_2
RFU
RFU
U
GND
GND
GND
GND
GND
PWR
_2
PWR
_2
GND
GND
PWR
_2
PWR
_2
GND
GND
DNU
NC
NC
V
NC
NC
RFU
RFU
W
GND
GND
GND
GND
GND
GND
LED
1#
RFU
PWR
_1
PWR
_1
GND
RFU
RFU
GND
GND
DNU
DNU
NC
Y
NC
NC
GND
DNU
DNU
PWR
_1
PWR
_1
GND
DNU
GND
DNU
DNU
AA
GND
GND
GND
GND
GND
DNU
DNU
DNU
DNU
NC
DNU
DNU
DNU
GND
GND
DNU
DNU
DNU
AB
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
AC
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
DNU
11 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
SINGLE PACKAGE INTERFACE SIGNALS
Interface
Signal Name
Description
Location
Power and
Grounds
PWR_1
3.3 V Source
D9, D10, E9, E10, W9, W10, Y9,
Y10
PWR_2
1.8 V Source
R7, R8, R11, R12, T7, T8, T11,
T12, U7, U8, U11, U12
PWR_3
1.2 V Source
G7, G8, G11, G12, H7, H8, H11,
H12, J7, J8, J11, J12
Power and
Grounds
GND
GND
C1-C5, C15, D6, D11,
E1-E7, E11, E14, E15, F6, G1-
G5, G9, G10, G14, G15, H9, H10,
J1-J5, J9, J10, J14, J15, K7-K12,
L1-L5, L14, L15, M9, M10, N1-
N5, N14, N15, P7-P12, R1-R5,
R9, R10, R14, R15, T9, T10,
U1-U5, U9, U10, U14, U15, W1-
W6, W11, W14, W15, Y6, Y11,
Y13, AA1-AA5, AA14, AA15
PCIe
PERp0, PERn0
PCIe 0
Device Receiver
F4, F5
PETp0, PETn0
PCIe 0
Device Transfer
H4, H5
PERp1, PERn1
PCIe 1
Device Receiver
K4, K5
PETp1, PETn1
PCIe 1
Device Transfer
M4, M5
REFCLKp,
REFCLKn
PCIe Reference Clock
D4, D5
PERST#
PE-Reset
D7
CLKREQ#
Clock Request
D8
SSD
Specific
Signals
LED1#
Device Activity
W7
PEDET
Host I/F Indication
(PCIe:OPEN / SATA:GND)
F14
Optional
Signals
DIAG0, DIAG1
Diagnosis, option for engineering
D13, E13
12 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
Interface
Signal Name
Description
Location
Other
Signals
RFU
Reserved; OPEN
C13, C14, D15, F15, H14, H15,
K14, K15, L7, L8, L9, L10, L11,
L12, M7, M8, M11, M12, M14,
M15, N7, N8, N9, N10, N11, N12,
P14, P15, T14, T15, V14, V15,
W8, W12, W13
DNU
Manufacturing purpose only;OPEN
A1, A2, A4, A6, A8, A11, A13,
A15, A17, A18, B1, B2, B4, B8,
B11, B13, B15, B17, B18, C6, C9,
C11, C12, C16-C18, D12, E16-
E18, G16-G18, J16-J18, L16,
L17, N16, R16, U16, W16, W17,
Y7, Y8, Y12, Y14, Y15, AA6-AA9,
AA11-AA13, AA16-AA18, AB1,
AB2, AB4, AB6, AB8, AB11,
AB13, AB15, AB17, AB18, AC1,
AC2, AC4, AC6, AC8, AC11,
AC13, AC15, AC17, AC18
NC
Not used; OPEN
B6, C7, C8, C10, D14, E8, E12,
L18, N17, N18, P4, P5, R17, R18,
T4, T5, U17, U18, V4, V5, W18,
Y4, Y5, AA10
13 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
M.2 2230 MODULE
Unit:mm
Figure 4: Interface Dimensions of KBG3xZMSxxxx (M.2 2230 Module)
14 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
M.2 2230 MODULE CONNECTOR PIN ASSIGNMENT
Pin
#
Signal
Name
Description
Pin
#
Name
Description
1
CONFIG_3
GND
2
+3.3V
3.3 V Source
3
GND
GND
4
+3.3V
3.3 V Source
5
Reserved
NC
6
Reserved
NC
7
Reserved
NC
8
Reserved
NC
9
Reserved
NC
10
LED1#
Device Activity
11
Reserved
NC
Notch
Notch
20
Reserved
NC
21
CONFIG_0
GND
22
Reserved
NC
23
Reserved
NC
24
Reserved
NC
25
Reserved
NC
26
Reserved
NC
27
GND
GND
28
Reserved
NC
29
PETn1
PCIe 1
Device Transfer
30
Reserved
NC
31
PETp1
32
Reserved
NC
33
GND
GND
34
Reserved
NC
35
PERn1
PCIe 1
Device Receiver
36
Reserved
NC
37
PERp1
38
Reserved
NC
39
GND
GND
40
Reserved
NC
41
PETn0
PCIe 0
Device Transfer
42
Reserved
NC
43
PETp0
44
Reserved
NC
45
GND
GND
46
Reserved
NC
47
PERn0
PCIe 0
Device Receiver
48
Reserved
NC
49
PERp0
50
PERST#
PE-Reset
51
GND
GND
52
CLKREQ#
Clock Request
53
REFCLKn
PCIe Reference Clock
54
PEWAKE#
NC
55
REFCLKp
PCIe Reference Clock
56
MFG DATA
Manufacturing pin. Must NOT be
connected on host board.
57
GND
GND
58
MFG CLOCK
Notch
Notch
67
Reserved
NC
68
SUSCLK
NC
69
PEDET
Host I/F Indication
(PCIe:OPEN / SATA:GND)
70
+3.3V
3.3 V Source
71
GND
GND
72
+3.3V
3.3 V Source
73
GND
GND
74
+3.3V
3.3 V Source
75
GND
GND
15 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
COMMAND TABLE
ADMIN Command set
Op-Code
Command Name
00h
Delete I/O Submission Queue
01h
Create I/O Submission Queue
02h
Get Log Page
04h
Delete I/O Completion Queue
05h
Create I/O Completion Queue
06h
Identify
08h
Abort
09h
Set Features
0Ah
Get Features
0Ch
Asynchronous Event Request
10h
Firmware Commit
11h
Firmware Image Download
14h
Device Self-Test (DST)
80h
Format NVM
81h
Security Send
82h
Security Receive
Set Features / Get Features Set
Op-Code
Feature Name
01h
Arbitration
02h
Power Management
04h
Temperature Threshold
05h
Error Recovery
06h
Volatile Write Cache
07h
Number of Queues
08h
Interrupt Coalescing
09h
Interrupt Vector Configuration
0Ah
Write Atomicity
0Bh
Asynchronous Event Configuration
0Ch
Autonomous Power State Transition
0Dh
Host Memory Buffer (HMB)
10h
Host Controlled Thermal Management (HCTM)
16 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
NVMe Command Set
Op-Code
Command Name
00h
Flush
01h
Write
02h
Read
04h
Write Uncorrectable
05h
Compare
09h
Dataset Management
17 / 17
Copyright © 2018 Toshiba Memory Corporation. All rights reserved.
Client SSD BG3 Series Brochure Rev.1.10
Products and specifications discussed herein are for reference purposes
only and are subject to change without notice. All information discussed
herein is provided on an “as is” basis, without warranties of any kind.
Before creating and producing designs and using, customers must refer to
and comply with the latest versions of the product specifications.
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as “Product”.
TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written
permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for
complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize
risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including
data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own
applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without
limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the
"TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for.
Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
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